Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-03-12
1984-12-11
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29591, 148 15, 156643, 357 23, H01L 21265
Patent
active
044869436
ABSTRACT:
The invented technique permits the gate length to equal the channel length: source/drain regions are self-aligned and non-overlapping with respect to their gate electrode. The non-overlapping feature, along with other optimized device characteristics, are generally provided by defining a gate electrode over a substrate, forming an implant mask of dielectric, for example, on the sides of the gate electrode, and implanting a source/drain region such that the implant mask shields a portion of the substrate from implantation to provide a gap between a side edge of the gate electrode and the implanted regions. The source/drain region is then heat driven until its side edge is substantially aligned with the edge of the gate electrode. Self-aligned source/drain contacts are also provided using the implant mask to isolate the gate electrode from the contacts and interconnects.
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Adams James R.
Derbenwick Gary F.
Gnadinger Alfred P.
Hanson Matthew V.
Ryden William D.
Hearn Brian E.
Inmos Corporation
Manzo Edward D.
Schiavelli Alan E.
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