Zero-curvature band gap reference cell

Details Zero-curvature band gap reference cell Zero-curvature band gap reference cell

1993-05-03

1996-05-21

Nguyen, Matthew V.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

G05F 316

Patent

active

055193080

ABSTRACT:
In one band gap reference cell, first and second transistors have the bases thereof coupled together. A first supply voltage line is operatively connected to the collectors of the transistors and a second supply voltage line is operatively connected to the emitters of the transistors. The voltage supply lines produce a current proportional to temperature when the device is operating. A first resistor is connected between the emitter of one of the transistors and the second supply line. A third transistor has the base thereof coupled to the bases of the first and second transistors. A current is established in a curve-compensation resistor which is equal to the sum of the currents in the first and second transistors less a nonlinear portion which arises from variations in V.sub.BE with respect to temperature. A second resistor is connected across the base-emitter junction of one of the transistors. A current complementary to temperature is established in the resistor when the device is operating. The currents in the transistors and in the resistor are combined to produce a reference current having a predetermined temperature coefficient characteristic. Appropriate selection of resistor values enables providing a reference voltage greater than the band gap voltage.

REFERENCES:
patent: Re30586 (1981-04-01), Brokaw
patent: 3887863 (1975-06-01), Brokaw
patent: 4319180 (1982-03-01), Nagano
patent: 4714872 (1987-12-01), Traa
patent: 4808908 (1989-02-01), Lewis et al.
McGlinchey, Gerard Data Acquisition and Conversion, 1982 IEEE International Solid-State Circuits Conference, pp. 80, 81, 296.

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