Zero-bias Schottky barrier detector diodes

Details Zero-bias Schottky barrier detector diodes Zero-bias Schottky barrier detector diodes

1974-01-25

1976-07-06

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

427 88, 427124, 357 15, 357 67, B05D 512

Patent

active

039682722

ABSTRACT:
Metal-silicide-silicon Schottky barrier diodes are made by a process which yields the characteristic of low barrier height, in the region of 0.15 volt, suitable for use without dc bias as a detector at microwave frequencies. Low barrier height metals, such as palladium, platinum and hafnium are processed through heat treatment steps which reduce the barrier height below that which is typical of point contact diodes.

REFERENCES:
patent: 3274670 (1966-09-01), Lepselter
patent: 3300340 (1967-01-01), Calandrello et al.
patent: 3361592 (1968-01-01), Quetsch, Jr. et al.
patent: 3558366 (1971-01-01), Lepselter
patent: 3586542 (1971-06-01), MacRae
patent: 3700979 (1972-10-01), Saxena
patent: 3736478 (1973-05-01), Veloric
patent: 3770606 (1973-11-01), Lepselter

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