Electricity: power supply or regulation systems – In shunt with source or load – Using diode
Patent
1980-06-30
1982-06-22
Larkins, William D.
Electricity: power supply or regulation systems
In shunt with source or load
Using diode
357 13, 357 35, 357 42, 357 86, 357 23, H01C 2704, G05F 318
Patent
active
043364896
ABSTRACT:
Butted guard band CMOS circuits have a typical breakdown of about 7 volts. It is often desirable to operate circuitry from supplies greater than 7 volts. For example, 9 volts is a commonly used supply value. An isolated zener diode is fabricated into a CMOS integrated circuit so as to develop a voltage drop equal to guard band breakdown. The zener voltage is coupled by way of a diode-connected transistor to the operating circuitry. The diode drop substracts from the zener voltage so that the circuitry is always operated at a voltage below its breakdown.
REFERENCES:
patent: 4006491 (1977-02-01), Alaspa et al.
Davis, IEEE J. of Solid State Circuits, vol. Sc 8, No. 6, Dec. 1973, pp. 419-423.
Larkins William D.
National Semiconductor Corporation
Schulte Neil B.
Sheridan James A.
Woodward Gail W.
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