Zener regulated programming circuit for a nonvolatile memory

Details Zener regulated programming circuit for a nonvolatile memory Zener regulated programming circuit for a nonvolatile memory

1991-03-11

1992-04-07

Clawson, Jr., Joseph E.

Static information storage and retrieval

Powering

365 96, 365104, 365185, 3072966, 307318, 357 235, G11C 702

Patent

active

051034255

ABSTRACT:
Zener diodes that are formed concurrently with flash EEPROM cells are utilized to regulate programming voltages for programming a flash EEPROM cell (37). A selected bit-line (38) is voltage regulated with both a zener diode (19) and a bias transistor (36). The bias transistor is activated during programming to prevent breaking down a drain junction of a flash EEPROM cell, which would generate hot-electrons and cause a runaway programming problem. The regulated voltage on the bit-line is also utilized to optimize programming characteristics of a flash EEPROM cell, and to minimize disturbing a programmed logic state of flash EEPROM cells connected to a commonly selected bit-line. A separate zener diode (17) provides a regulated voltage for a selected word-line (40) during programming. By regulating the voltage of the word-line during programming, a program disturb problem associated with a high voltage word-line is minimized.

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patent: 4972375 (1990-11-01), Ueno et al.
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IEEE Trans. on Electon Devices, "Hi-MNOS II Technology for a 64-kbit Byte-Erasable 5-V-Only EEPROM," Yuji Yatsuda et al., vol. ED-32, No. 2, Feb. 1985, pp. 224-231.
1991 Symposium on VLSI Circuits, "A 512Kb Flash EEPROM for a 32 Bit Microcontroller," Oiso, Japan, May 30, 1991-Jun. 1, 1991, pp. 87-88.

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