Zener diodes in a linear semiconductor device

Details Zener diodes in a linear semiconductor device Zener diodes in a linear semiconductor device

1989-06-21

1991-10-08

Hille, Rolf

357 20, 357 21, H01L 2990

Patent

active

050558889

ABSTRACT:
A Zener diode structure comprising a semiconductor substrate layer of a first conductivity type, a first epitaxially formed semiconductor layer of the first conductivity type disposed on the substrate layer, a second epitaxially formed semiconductor layer of a second conductivity type disposed on the first semiconductor layer, a third semiconductor layer of the first conductivity type disposed over the second semiconductor layer, a buried layer of the first conductivity type disposed between and contacting the second and third semiconductor layers and a semiconductor contact region of the second conductivity type extending between and contacting a surface of the third semiconductor layer and the buried layer, the semiconductor contact region being an anode of a Zener diode, the buried layer being a cathode of the Zener diode.

REFERENCES:
patent: 4155777 (1979-05-01), Dunkley et al.
patent: 4405933 (1983-09-01), Avery
patent: 4631562 (1986-12-01), Avery
patent: 4651178 (1987-03-01), Avery

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