Zener diode semiconductor device with contact portions

Details Zener diode semiconductor device with contact portions Zener diode semiconductor device with contact portions

1998-02-09

1999-12-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

Reverse bias tunneling structure

257362, 257603, 257751, 257771, H01L 2348, H01L 2352, H01L 2940

Patent

active

060021446

ABSTRACT:
A semiconductor device having a zener diode, wherein an anode electrode and a cathode electrode of the zener diode have a barrier metal layer as an underlying layer, i.e., a barrier metal structure to simplify manufacturing steps of the semiconductor device, while ensuring that the zener diode is short-circuited with a low resistance without variations in resistance. The anode electrode (6) and the cathode electrode (8) are formed with an underlying metal layer made of a barrier metal. The anode electrode and the cathode electrode are shaped such that Xa<La and Xc<Lc are satisfied, where Xa and Xc are the widths of opposite sides of contact portions of the anode electrode and the cathode electrode, at which they are connected to an anode region and a cathode region, respectively, and La and Lc are the lengths of the respective contact portions.

REFERENCES:
patent: 3677838 (1972-07-01), Brebisson
patent: 4119440 (1978-10-01), Hile
patent: 5648678 (1997-07-01), Begley et al.
Stephens, "Stable Zener Diode", IBM Technical Disclosure Bulletin, vol. 19, No. 5, Oct. 1975, pp. 1782-1783, Oct. 1976.

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