Zener diode incorporating an ion implanted layer establishing th

Details Zener diode incorporating an ion implanted layer establishing th Zener diode incorporating an ion implanted layer establishing th

1973-07-09

1978-03-14

Miller, Jr., Stanley D.

357 88, 357 89, 357 90, 357 91, H01L 2990

Patent

active

040794024

ABSTRACT:
A zener diode in which the anode region of a first conductivity material is formed by diffusion in a semiconductor body, a cathode region of a second conductivity material is formed by diffusion in the semiconductor body, and the two regions are bridged by a third region extending through the two regions, the third region being a shallow layer of ion implanted doping material of said first conductivity type. In one embodiment, the anode and cathode regions are spaced-apart; in a second embodiment the cathode region is formed within the anode region. The ion implanted layer has a concentration that peaks below the surface, thus establishing the breakdown point for the avalanching of the zener diode below the surface and removed from surface contaminants such as found in the oxide surface layer.

REFERENCES:
patent: 3354364 (1967-11-01), Nakamura
patent: 3656031 (1972-04-01), Bresee et al.
patent: 3717516 (1973-02-01), Hatcher et al.
patent: 3723830 (1973-03-01), Frederiksen et al.
R. Warner et al., "Integrated Circuits-Design Prin. and Fab.", McGraw-Hill, 1965, pp. 65-67.

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