Metal treatment – Compositions – Heat treating
Patent
1977-10-07
1979-05-22
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 13, 357 20, 357 91, H01L 2930, H01L 21263
Patent
active
041557778
ABSTRACT:
A zener diode in which the anode region of a first conductivity material is formed by diffusion in a semiconductor body, a cathode region of a second conductivity material is formed by diffusion in the semiconductor body, and the two regions are bridged by a third region extending through the two regions, the third region being a shallow layer of ion implanted doping material of said first conductivity type. In one embodiment, the anode and cathode regions are spaced-apart; in a second embodiment the cathode region is formed within the anode region. The ion implanted layer has a concentration that peaks below the surface, thus establishing the breakdown point for the avalanching of the zener diode below the surface and removed from surface contaminants such as found in the oxide surface layer.
REFERENCES:
patent: 3378915 (1968-04-01), Zenner
patent: 3457469 (1969-07-01), Lawrence
patent: 3634738 (1972-01-01), Leith et al.
patent: 3677838 (1972-07-01), De Brebisson
patent: 3717516 (1973-02-01), Hatcher, Jr. et al.
patent: 3723830 (1973-03-01), Frederiksen et al.
patent: 3921199 (1975-11-01), Yuan et al.
Dunkley James L.
Solomon James E.
National Semiconductor Corporation
Roy Upendra
Rutledge L. Dewayne
Woodward Gail W.
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