Ammunition and explosives – Igniting devices and systems – Accidental fuse ignition prevention means
Patent
1991-10-08
1993-01-12
Jordan, Charles T.
Ammunition and explosives
Igniting devices and systems
Accidental fuse ignition prevention means
1022021, 1022025, F42B 313, F42B 3182
Patent
active
051792486
ABSTRACT:
A semiconductor bridge comprises a substrate of non-electrically conductive material, a doped semiconductor layer on the substrate, as well as first and second metal lands forming ohmic contacts on the doped semiconductor layer. An explosive charge bridges a gap between the metal lands across the doped semiconductor layer. The lands, gap, semiconductor layer, and charge are dimensioned and arranged so that in response to a current equal to or in excess of a predetermined level having a duration equal to or in excess of a predetermined value being applied across the gap, a plasma having sufficient energy to energize the explosive is formed in the gap. The predetermined current has a predetermined minimum firing voltage associated with it. The semiconductor bridge is one of a lot having a firing voltage standard deviation of about 0.05 volts. Premature energization of the explosive by electrostatic discharge and voltages greater than the firing voltage and by AC induced voltages is prevented by connecting a zener diode across the first and second lands. The zener diode is chosen to conduct in the backward direction in response to a positive voltage of about 1.1 times the predetermined minimum firing voltage being applied across it.
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Hartman J. Keith
McCampbell Carroll B.
Jordan Charles T.
SCB Technologies Inc.
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