Zener diode emulation and method of forming the same

Details Zener diode emulation and method of forming the same Zener diode emulation and method of forming the same

1987-11-23

1990-03-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 357 13, H01L 21265, H01L 2990

Patent

active

049101587

ABSTRACT:
An integrated circuit structure which emulates the reverse bias breakdown characteristic of a Zener diode is disclosed. It is particularly suited for gallium arsenide MESFET fabrication, for which satisfactory Zener-type devices are not otherwise available. Back-to-back buried diodes are formed by implanting a buried layer of one polarity doping into a semi-insulating substrate, and further implanting a pair of spaced contact regions of opposite polarity but higher doping levels from the buried layer to the substrate surface. The diode action takes place at the junctions of the contact regions and the buried layer. The device is symmetrical in operation, exhibiting a sharp breakdown at a defined voltage threshold. Specific implant energies and concentrations for a buried layer doped with Be.sup.+ ions and contact regions doped with Si.sup.+ ions are described. In an alternate embodiment, only one contact region is of opposite polarity to the buried layer, resulting in only one buried diode.

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