Zener diode and method for production thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode

Reexamination Certificate

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C257S605000, C257S401000, C257S618000, C438S081000, C438S380000, C438S545000

Reexamination Certificate

active

07485947

ABSTRACT:
A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that decrease as the N-doped region and the P-doped region approach the PN junction. The zener diode circuit also includes a transistor that provides current to the zener diode, and circuitry that detects a state of the zener diode.

REFERENCES:
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patent: 5936288 (1999-08-01), Tsuchida et al.
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International Preliminary Examination Report—Application No. PCT/EP2002/014174, dated Aug. 26, 2004.

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