Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode
Reexamination Certificate
2002-12-12
2009-02-03
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
C257S605000, C257S401000, C257S618000, C438S081000, C438S380000, C438S545000
Reexamination Certificate
active
07485947
ABSTRACT:
A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that decrease as the N-doped region and the P-doped region approach the PN junction. The zener diode circuit also includes a transistor that provides current to the zener diode, and circuitry that detects a state of the zener diode.
REFERENCES:
patent: 4589002 (1986-05-01), Olmstead
patent: 4590664 (1986-05-01), Prentice et al.
patent: 4646114 (1987-02-01), Vinn et al.
patent: 4672403 (1987-06-01), Jennings
patent: 5852323 (1998-12-01), Conn
patent: 5936288 (1999-08-01), Tsuchida et al.
patent: 5990534 (1999-11-01), Tsuji
patent: 0 054 740 (1981-11-01), None
patent: 0 054 740 (1982-06-01), None
patent: 0 595 629 (1993-10-01), None
patent: 0 612 109 (1994-01-01), None
patent: 0 883 193 (1998-12-01), None
patent: 58063176 (1983-04-01), None
patent: 62145879 (1987-06-01), None
International Preliminary Examination Report—Application No. PCT/EP2002/014174, dated Aug. 26, 2004.
Austriamicrosystems AG
Fish & Richardson P.C.
Wojciechowicz Edward
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