1975-03-10
1977-06-14
Wojciechowicz, Edward J.
357 74, 357 81, H01L 2990, H01L 2302
Patent
active
040301176
ABSTRACT:
A zener diode adapted for mounting in a double plug package has a shallow junction region formed by a controlled diffusion of a first type of semiconductivity impurity into a semiconductive material having a second type of semiconductivity to establish a desired zener voltage. A region of deep diffusion of first type of semiconductivity impurity is formed adjacent to and in contact with the shallow junction region and a metal contact is connected to the deep diffused region.
REFERENCES:
patent: 3723835 (1973-03-01), Davis et al.
patent: 3735210 (1973-05-01), Kalish et al.
patent: 3881179 (1975-04-01), Howard
International Telephone and Telegraph Corporation
O'Halloran John T.
Van Der Sluys Peter C.
Wojciechowicz Edward J.
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