Yttrium oxide material, member for use in semiconductor...

Details Yttrium oxide material, member for use in semiconductor... Yttrium oxide material, member for use in semiconductor...

2009-02-11

2010-06-29

Kopec, Mark (Department: 1796)

Compositions

Electrically conductive or emissive compositions

Carbide containing

C252S520500, C252S521100

Reexamination Certificate

active

07744780

ABSTRACT:
A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14is produced during a sintering step of a raw material that contains the main component Y2O3and an accessory component Si3N4. Y8Si4N4O14and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.

REFERENCES:
patent: 4501723 (1985-02-01), Ezis et al.
patent: 7375046 (2008-05-01), Aihara et al.
patent: 2008/0226894 (2008-09-01), Kobayashi et al.
patent: 11-278935 (1999-10-01), None
patent: 2006-069843 (2006-03-01), None
patent: 2006-225185 (2006-08-01), None

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