Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Reexamination Certificate
2002-02-14
2004-08-17
Hassanzadeh, Parviz (Department: 1763)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
C118S7230AN
Reexamination Certificate
active
06776873
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to equipment utilized in the manufacture of semiconductor integrated circuits (IC) and, in particular, to utilization of a yttrium oxide (Y
2
O
3
) coating on the anodized aluminum alloy components utilized in a semiconductor integrated circuit vacuum process chamber to improve corrosion resistance and erosion.
2. Discussion of the Related Art
Corrosion/erosion resistance is a critical property for parts used in IC fabrication vacuum chambers, where both corrosive chemistries and high-energy plasma bombardment reduce component lifetime and create contamination problems.
Anodized aluminum alloy is a primary material used in making components utilized in IC processing chambers. However, the high concentration of impurities contained in conventional aluminum alloy causes formation of precipitates in the alloy which, in turn, cause internal cracks in the anodization layer. The integrity of the anodization layer is, thus, deteriorated and its corrosion resistance is severely damaged. The impurity concentration (wt. %) of “conventional” aluminum alloy, such as 6061, is as follows: Mg=0.8-1.20; Cu=0.15-0.40; Zn=max. 0.25; Mn=max. 0.15; Fe=max. 0.70; Si=0.40-0.80; Others=max. 0.15
More recently, high purity aluminum alloy material has been developed, resulting in minimal internal cracking in the anodization layer. Current data shows that chamber parts made from high purity aluminum alloy materials perform much better than those made from conventional alloy “High purity” aluminum alloy means aluminum alloy with all impurities other than Mg being less than about 0.1 wt. % each, particularly Si, Fe and Cu.
Although high purity anodized aluminum alloy has a much better corrosion/erosion rate than the traditional anodized aluminum alloy, the anodization layer will still be attacked by the aggressive chamber environment after prolonged usage. The resulting need to replace parts reduces tool up-time and increases the cost of ownership.
Therefore there is always a need to continuously improve the lifetime of the aluminum alloy chamber components.
We are aware that yttrium oxide coatings have been used on anodized aluminum in the automobile and aerospace industries.
SUMMARY OF THE INVENTION
We have found that applying a ceramic-based surface protective layer, a yttrium oxide (Y
2
O
3
) coating, on the anodized surface of aluminum alloy chamber components improves the resistance of the anodized surface to corrosion and erosion by a factor of
5
× over the anodized surface alone, particularly in the fluorine/oxygen plasma environment typically used in fabricating ICs.
A better understanding of the features and advantages of the present invention will be obtained by reference to the following detailed description and accompanying drawings that set forth an embodiment in which the principles of the invention are utilized.
REFERENCES:
patent: 5488825 (1996-02-01), Davis et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5680013 (1997-10-01), Dornfest et al.
patent: 5762748 (1998-06-01), Banholzer et al.
patent: 5798016 (1998-08-01), Oehrlein et al.
patent: 5904800 (1999-05-01), Mautz
patent: 6170429 (2001-01-01), Schoepp et al.
patent: 6408786 (2002-06-01), Kennedy et al.
patent: 6521046 (2003-02-01), Tanaka et al.
patent: 2001/0003271 (2001-06-01), Otsuki
patent: 2002/0110698 (2002-08-01), Singh
patent: 2003/0010446 (2003-01-01), Kajiyama et al.
patent: 2003/0075109 (2003-04-01), Arai
patent: 19955134 (2001-05-01), None
patent: 293198 (1988-11-01), None
patent: 03287797 (1991-12-01), None
patent: 2001023908 (2001-01-01), None
patent: 2001049419 (2001-02-01), None
Kumar Ananda H
Lin Yixing
Stow Clifford C
Sun Jennifer Y
Thach Senh
Church Shirley L.
Hassanzadeh Parviz
Moore Karla
Peters Loretta A
LandOfFree
Yttrium oxide based surface coating for semiconductor IC... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Yttrium oxide based surface coating for semiconductor IC..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Yttrium oxide based surface coating for semiconductor IC... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3347698