Yttrium-doped bismuth titanate thin film and preparation...

Details Yttrium-doped bismuth titanate thin film and preparation... Yttrium-doped bismuth titanate thin film and preparation...

2007-07-31

2007-07-31

McNeil, Jennifer (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S701000, C427S255190, C029S592100, C029S255000, C029S255000

Reexamination Certificate

active

10672753

ABSTRACT:
A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device:in-line-formulae description="In-line Formulae" end="lead"?Bi4-xYxTi3O12  (I)in-line-formulae description="In-line Formulae" end="tail"?wherein x is an integer of 0.1 to 2.

REFERENCES:
patent: P-2003-151976 (2003-06-01), None

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