Yoked, orthogonally distributed equal reactance amplifier

Details Yoked, orthogonally distributed equal reactance amplifier Yoked, orthogonally distributed equal reactance amplifier

1987-08-27

1990-08-07

Hille, Rolf

Amplifiers

Signal feedback

Combined with control of bias voltage of signal amplifier

357 15, 357 16, 330277, H01L 2948, H01L 29161, H03F 316

Patent

active

049472208

ABSTRACT:
A field effect transistor device especially useful in common gate amplifier circuits for use with millimeter wave and microwave signals. By forming the device in a unitary monolith, and by making the device's source to gate and drain to gate geometry identical, the input and output portions of the device are symmetric and impedance matched, increasing the device's power handling capacity. The device's source and drain contain heavily doped regions which operate to increase the device's upper frequency range, and also act as inherent channel end stops. In several embodiments, plural such devices are yoked together integrally source to drain, eliminating common structures of adjacent stages, simplifying the device and its fabrication, and permitting traveling wave amplification.

REFERENCES:
patent: 3427514 (1969-02-01), Olmstead et al.
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patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4291286 (1981-09-01), Wagner
patent: 4628338 (1986-12-01), Nakayama et al.
patent: 4686387 (1987-08-01), Rumelhard
patent: 4737733 (1988-04-01), Laprade
patent: 4760350 (1988-07-01), Ayasli
G. McIver et al., "A Traveling-Wave Transistor," Proc. IEEE, Nov. 1965, pp. 1747, 1748.
M. N. Yoder, "Applications of Diamond Technology" (copies in viewgraphs shown in Jul. 1986).
"Solicitation No. N00014-86-R-0047" (Source Selection Procedure: Traveling Wave Techniques for Broadband Power Amplifiers) (mailed on or about Sep. 1, 1986).

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