Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-01-17
2006-01-17
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000, C257S013000
Reexamination Certificate
active
06987286
ABSTRACT:
A light-emitter structure is provided. The light emitter structure includes a platform. An Inx(AlyGa1-y)1-xP lower clad region is formed on the platform and has a lattice constant between approximately 5.49 Å and 5.62 Å. A strained quantum-well active region is formed on the lower clad region. An Inx(AlyGa1-y)1-xP upper clad region is formed on the strained quantum well active region.
REFERENCES:
patent: 5300794 (1994-04-01), Melman et al.
patent: 5363392 (1994-11-01), Kasukawa et al.
patent: 5557627 (1996-09-01), Schneider et al.
patent: 5751753 (1998-05-01), Uchida
patent: 6064076 (2000-05-01), Chen et al.
patent: 6081540 (2000-06-01), Nakatsu
patent: 6108360 (2000-08-01), Razeghi
patent: 6278136 (2001-08-01), Nitta
patent: 6433364 (2002-08-01), Hosoba et al.
patent: 2001/0028061 (2001-10-01), Hosoba et al.
“Evolution of microstructure and dislocation dynamics in InxGa1−xP graded Buffers grown on GaP by metalorganic vapor phase epitaxy: engineering device-quality substrate materials,” Kim et al.J. Vac. Sci. Technol. B. Jul./Aug. 1999. vol. 17.
“Yellow-Green emission for ETS-LEDs and Lasers based on a strained InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer,” McGill et al.Mat. Res. Soc. Symp. 2003: vol. 744.
“Gas-Source Molecular Beam Epitaxial Growth, Characterization, and Light-Emitting diode application of InxGa1−xP on GaP(100),” Chin et al.Applied Physics Letters. May 1993. vol. 62, No. 19.
“Highly Strained InxGa1−xP/GaP Quantum Wells Grown on GaP and on an Inx/2Ga1−x/2P Buffer Layer by Gas-Source Molecular Beam Epitaxy,” Bi et al.Journal of Crystal Growth. 1996. vol. 165.
“Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy,” Chen et al.Japanese Journal of Applied Physics. Jan. 1992. vol. 31.
“High-Efficiency InGaP Light-Emitting Diodes on GaP Substrates,” Stinson et al.Applied Physics Letters. May 1991. vol. 58, No. 18.
“AlGaInP/GaInP Double-Heterostructure Orange Light-Emitting Diodes on GaAsP Substrates Prepared by Metalorganic Vapor-Phase Epitaxy,” Lin et al.Journal of Crystal Growth. 1994. vol. 137.
“Metalorganic Vapor Phase EpitaxyGrowth and Characterization of (AlxGa1−x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7, and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate,” Jou et al.Japanese Journal of Applied Physics. Oct. 1993. vol. 32, No. 10.
“Yellow-Green Emission for ETS-LEDs and lasers based on a strained -InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer,” McGill et al.Mat. Res. Symp. Proc. 2003. vol. 744.
“Growth and Characterization of Lattice-Mismatched InxGa1−xP Yellow Light Emitting Diodes on GaP,” Paul Liu, Phd. Thesis University of Illinois. 1997.
“Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1−x)0.5In0.5P/Ga0.5In0.5P(x=0.4, 0.7, and 1.0) Quantum Wells on 15° -Off-(100) GaAs Substrates at High Growth Rate” Jou et al.Jpn. Journal of Applied Physics. Oct. 1993. vol. 32, No. 10.
Fitzgerald Eugene A.
McGill Lisa
Jackson Jerome
Massachusetts Institute of Technology
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