Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2004-09-14
2009-06-16
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S222000, C257S226000, C257S291000, C257SE31058
Reexamination Certificate
active
07547927
ABSTRACT:
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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Mabuchi Keiji
Mori Tomonori
Suzuki Ryoji
Depke Robert J.
Louie Wai-Sing
Rockey, Depke & Lyons LLC.
Sony Corporation
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