X-ray wave diffraction optics constructed by atomic layer epitax

Details X-ray wave diffraction optics constructed by atomic layer epitax X-ray wave diffraction optics constructed by atomic layer epitax

1993-12-09

1995-10-17

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 92, 117 93, 117108, 117953, 117954, 378 36, 378 71, 378 84, 378 85, C30B 2516

Patent

active

054580846

ABSTRACT:
X-ray wave diffraction devices are constructed using atomic layer epetaxy. A crystalline substrate is prepared with one or more surface areas on which multiple pairs of layers of material are to be deposited. These layers are then formed by atomic layer epetaxy on the surface areas of the substrate, one on top of another, with the material of each layer of each pair being selected to have a different index of refraction from that of the material of the other layer of each pair. The layers are formed so that the thickness of each layer of a pair is substantially the same as that of the corresponding layer of every other pair and so that x-ray waves impinging on the layers may be reflected therefrom. Layer pairs having a thickness of about 20 angstroms or less are formed on the substrate.

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