X-ray photolithography

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250276, 250280, 250492A, H01J 3700

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active

040285472

ABSTRACT:
Photolithography of microcircuits with elements in the micrometer size range is performed with X-ray exposure of photoresist layers through electron beam generated shadow masks. Synchrotron radiation from a particle accelerator is used as an intense source of well collimated X-rays and Bragg reflection from a mosaic crystal is used to provide spectral purity for good contrast in the exposed photoresist pattern.

REFERENCES:
patent: 3424428 (1969-01-01), Canon
patent: 3612861 (1971-10-01), Dorfler
patent: 3743842 (1973-07-01), Smith
"Ultrafine Line Projection System," Feder et al., IBM Tech. Bulletin, vol. 16, No. 9, Feb. 1974, pp. 3121-3122.

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