X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1993-01-05
1993-11-23
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378 85, 378145, G21K 106
Patent
active
052651436
ABSTRACT:
In one aspect, the invention involves an optical element in an x-ray imaging system. The element comprises a substrate overlain by a multilayer coating. The multilayer coating comprises plural first and at least second material layers in alternation. This coating is soluble in at least one etchant solution at an etching temperature less than 100.degree. C. The optical element further comprises a barrier layer intermediate the substrate and the multilayer coating. The barrier layer is relatively insoluble in the etchant solution at the etching temperature. In a second aspect of the invention, the optical element comprises a substrate and a multilayer coating as described above, and further comprises a release layer that underlies the multilayer coating. The release layer comprises a material that is relatively soluble in at least one etchant solution at an etching temperature less than 100.degree. C. In contrast to release layers of the prior art, the inventive release layer comprises germanium.
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N. M. Ceglio, et al., "Soft X-Ray Projection Lithography System Design", OSA Proceedings on Soft-X-Ray Projection Lithography, 1991, vol. 12, J. Bokor, ed., Optical Society of America (1991) 5-10.
D. P. Gaines, et al., "Repair of high performance multilayer coatings", SPIE vol. 1547 Multilayer Optics for Advanced X-Ray Applicaitons (1991) 228-238.
D. L. Windt, et al., "Interface Imperfections in Metal/Si X-Ray Multilayer Structures", O.S.A. Proc. on Soft-X-Ray Projection Lithography 12, (1991) 82-86.
T. A. Shankoff, et al., "High Resolution Tungsten Patterning Using Buffered, Mildly Basic Etching Solutions", J. Electrochem. Soc.: Solid-State Science and Technology 122 (1975) 294-298.
Early Kathleen R.
Howard Richard E.
Tennant Donald M.
Waskiewicz Warren K.
Windt David L.
AT&T Bell Laboratories
Finston Martin I.
Porta David P.
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