X-ray mask blank process

Details X-ray mask blank process X-ray mask blank process

1985-04-26

1986-08-05

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

118 69, 427299, 430967, B05D 306

Patent

active

046042920

ABSTRACT:
An improved process, optimizing quality and growth rate with independent control of residual stress, is disclosed for the growing of membranes for use as X-ray lithography mask blanks. The process comprises providing a mounting fixture and a low-cost substrate material thereon, cooling the substrate to about the boiling point of hydrogen by passing a liquid coolant in contact with the fixture, depositing by a low-temperature plasma-enhanced method a thin membrane onto the cooled substrate, removing the substrate and the thereon deposited membrane from the fixture, and allowing the substrate thermally to expand by gradually assuming ambient room temperature, whereby the membrane will acquire optimum tensile stress. Preferably, the low-cost substrate is low grade industrial silicon and the membrane is formed of boron nitride, silicon carbide, silicon nitride, amorphous silicon, diamondlike carbon, aluminum oxide, beryllium and silicon oxide.

REFERENCES:
patent: 4325776 (1982-04-01), Menzel
patent: 4440108 (1984-04-01), Little et al.
patent: 4443488 (1984-04-01), Little et al.
patent: 4539278 (1985-09-01), Williams et al.
patent: 4543266 (1985-09-01), Matsuo et al.
A. C. Adams et al., "The Chemical Deposition of Boron-Nitrogen Films," J. Electro Chem. Soc. 127, Feb. 1980, pp. 399-405.
A. R. Shimkunas, "Advances in X-ray Mask Technology," Solid State Technology, Sep. 1984, pp. 192-199.

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