X-Ray mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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428408, 428446, 428426, 427 65, 427160, 204192C, 204192SP, 204192E, 430967, F24F 1300, B05B 500, C23C 1500, B32B 900

Patent

active

044367970

ABSTRACT:
An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375.degree. C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.

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