X-ray lithography system having collimating optics

Details X-ray lithography system having collimating optics X-ray lithography system having collimating optics

1979-08-13

1980-12-30

Church, Craig E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250272, 250280, 250505, G21K 500

Patent

active

042425883

ABSTRACT:
An X-ray lithography system for the production of micro-electronic circuits, of the type comprising a mask having detailed circuit patterns thereon which are irradiated by soft X-rays onto a wafer covered with a photosensitive material to replicate the mask patterns, includes an X-ray source spaced from the mask and operative to produce a plurality of input beams of X-rays which are substantially collimated by an array of grazing incidence mirrors to produce a plurality of output X-ray beams which are spaced from one another at the output of the collimator and which are projected in substantially parallel relation to one another toward the mask. Each output beam exhibits a small divergence which causes the several output beams to merge into a single, comparatively large cross-sectional area, composite beam of X-rays at a plane spaced from the collimator. The mask is positioned substantially in said plane for illumination by the composite beam of X-rays. Filters are provided, preferably in the region between the mask and the collimator, for adjusting the spatial uniformity and spectrum of the composite beam.

REFERENCES:
patent: 4028547 (1977-06-01), Eisenberger
"Ultrafine Line Projection System", Feder and Rosenberg, IBM Technical Disclosure Bulletin, V 16, No. 9, Feb. 1974, pp. 3121-3122.

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