Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From sulfur-containing reactant
528373, 480322, 480967, 378 34, 378 62, 378 64, C08G 7520
Poly (diene sulfones) have superior properties as X-ray resists. Many poly (diene sulfones) have an X-ray sensitivity below about 50 mJ/cm.sup.2, and a glass transition temperature above about 70.degree. C. A preferred X-ray resist is poly (1,3-hexadiene sulfone). A method of synthesizing poly (diene sulfones) is disclosed, in which a diene monomer is dissolved in a molar excess of a nitroalkane at low temperature, for example in a molar excess of dried 2-nitropropane in a -78.degree. C. dry ice/acetone bath, and reacted with a molar excess of sulfur dioxide in the presence of a free radical initiator such as tert-butyl-hydroperoxide.
patent: 3935331 (1976-01-01), Poliniak et al.
patent: 4097618 (1978-06-01), Poliniak
patent: 4267257 (1981-05-01), Poliniak et al.
patent: 5364739 (1994-11-01), Robillard
patent: 5458254 (1995-10-01), Miyagawa et al.
patent: 5846727 (1998-12-01), Aper et al.
Polymer Letters vol. 9, pp. 901-956 (1971) Ivin et al.
Florjanczyk, Z. et al., "Reactivity of Vinyl Monomers in the Copolymerization and Terpolymerization with Sulfur Dioxide,"Makromol. Chem., vol. 188, pp. 2811-2820 (1987).
Ivin, K. et al., "Structure of the Polysulfones of Some Conjugated Dienes," Poly. Lett., vol. 9, pp. 901-906 (1971).
Matsuda, M. et al., "Radical Copolymerization of Sulfur Dioxide and Chloroprene," J. Poly. Sci. A-1, vol. 10, pp. 837-843 (1972).
Minoura, Y. et al., "Polymerization of Butadiene Sulfone," J. Poly. Sci. A-1, vol. 4, pp. 2929-2944 (1966).
Reichmanis, E. et al., "Polymer Materials for Microlithography," Chem. Rev., vol. 89, pp. 1273-1289 (1989).
Thompson, L.F. et al., "A New Family of Positive Electron Beam Resists--Poly (Olefin Sulfones)," J. Electrochem. Soc.: Solid-State Science and Technology, vol. 120, pp. 1722-1726 (1973).
Daly William H.
Davies Jack D.
Board of Supervisors of Louisiana State University and Agricultu
Runnels John H.
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