X-Ray lithography mask and method for fabricating the same

Details X-Ray lithography mask and method for fabricating the same X-Ray lithography mask and method for fabricating the same

1983-07-15

1985-05-07

Kittle, John

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, 430324, 430966, 378 35, 204192C, 204192EC, 204192E, G03F 900

Patent

active

045158762

ABSTRACT:
An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF.sub.3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.

REFERENCES:
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patent: 4037111 (1977-07-01), Coquin et al.
patent: 4260670 (1981-04-01), Burns
patent: 4284678 (1981-08-01), Jones
patent: 4451544 (1984-05-01), Kawabuchi
patent: 4468799 (1984-08-01), Harms et al.
Bertelsen, IBM Technical Disclosure Bulletin, vol. 12, No. 10, Mar. 1970, p. 1600.
Thornton, J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977, pp. 164-168.
Thornton, J. Vac. Sci. Technol., vol. 11, No. 4, Jul./Aug. 1974, pp. 666-670.
Matsuo, Appl. Phys. Lett. 36(9), May 1980, pp. 768-770.
John N. Randall, "High-Resolution Pattern Defination in Tungsten", Appl. Physis. Lett. 39(9), Nov. 1, 1981, pp. 742-743.
John N. Randall et al., "Preparation of X-Ray Lithography Masks Using a Tungsten Reactive Ion Etching Process", Appl. Phys. Lett. 41(3), Aug. 1, 1982, pp. 247-248.

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