X-Ray lithography mask and devices made therewith

Details X-Ray lithography mask and devices made therewith X-Ray lithography mask and devices made therewith

1989-05-26

1991-09-24

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 35, 430966, 430967, G03F 900

Patent

active

050513265

ABSTRACT:
A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e.g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.

REFERENCES:
patent: 4451544 (1984-05-01), Kawabuchi
A. Heuberger, Journal of Vacuum Science and Technology, B6, 107 (1988).
J. P. Silverman, et al., Journal of Vacuum Science and Technology, B6 2147 (1988).
S. M. Sze, VLSI Technology, Second Edition, McGraw Hill Book Co., New York, 1988, pp. 238-248.
E. I. Bromley, et al., Journal of Vacuum Science Technology, B1, 1364 (1983).

Affiliated with

Also associated with

Rating

X-Ray lithography mask and devices made therewith does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with X-Ray lithography mask and devices made therewith, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and X-Ray lithography mask and devices made therewith will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1696044