Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1977-12-05
1980-01-22
Church, Craig E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250492R, A61K 2702, A61N 500, C08J 102, G21G 500
Patent
active
041852028
ABSTRACT:
X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10.sup.-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.
REFERENCES:
patent: 3743842 (1973-07-01), Smith et al.
patent: 4066905 (1978-01-01), Dassler et al.
patent: 4119855 (1978-10-01), Bernacki
Dean Robert E.
Maydan Dan
Moran Joseph M.
Taylor Gary N.
Bell Telephone Laboratories Incorporated
Canepa Lucian C.
Church Craig E.
O'Hare Thomas P.
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