Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-10-20
2000-01-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257258, 257443, 349138, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
060112743
ABSTRACT:
This invention is related to an active matrix liquid crystal display (AMLCD) or an X-ray imaging device having a high aperture ratio. The imager or display has an increased aperture ratio because electrodes are formed over dual insulating layers so as to overlap portions of the array address lines and/or TFTs. Both the manufacturability and capacitive crosstalk of the device are improved due to the use of a photo-imageable organic insulating layer between the pixel electrodes and the address lines. An intermediate inorganic insulating layer is provided between the photo-imageable organic insulating layer and the overlapped TFTs in order to prevent the organic insulating layer from directly contacting semiconductor material in the TFTs thereby reducing potential voltage swings.
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Boer Willem den
Gu Tieer
OIS Optical Imaging Systems, Inc.
Rhoa Joseph A.
Saadat Mahshid
Wilson Allan R.
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