X-ray detector and method of fabricating therefore

Details X-ray detector and method of fabricating therefore X-ray detector and method of fabricating therefore

2005-06-21

2005-06-21

Gagliardi, Albert (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370080, C257S428000

Reexamination Certificate

active

06909099

ABSTRACT:
An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

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