X-ray detector and method of fabricating therefore

Details X-ray detector and method of fabricating therefore X-ray detector and method of fabricating therefore

2005-06-14

2005-06-14

Gagliardi, Albert (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370080, C257S428000

Reexamination Certificate

active

06906331

ABSTRACT:
An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

REFERENCES:
patent: 5648674 (1997-07-01), Weisfield et al.
patent: 5729021 (1998-03-01), Brauers et al.
patent: 5895936 (1999-04-01), Lee
patent: 6020590 (2000-02-01), Aggas et al.
patent: 6060714 (2000-05-01), Zhong et al.
patent: 6380543 (2002-04-01), Kim
patent: 6403965 (2002-06-01), Ikeda et al.
patent: 6486470 (2002-11-01), Huang
patent: 6507026 (2003-01-01), Ikeda et al.
patent: 6600157 (2003-07-01), Watanabe et al.
patent: 6825473 (2004-11-01), Watanabe
patent: 6849853 (2005-02-01), Ikeda et al.

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