X-ray detector

Radiant energy – Automatic/serial detection of similar sources

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Details

2503361, 25037009, 350353, 357 4, 357 29, G01T 100

Patent

active

048734390

ABSTRACT:
X-ray detection systems based upon the nonlinear optical properties of multiple quantum well (MQW) semiconductor structures is described. X-rays generate carriers which change the index of refraction of the MQW material. Light from a probe beam may be scattered or reflected off the MQW structure and modulated by the change in refractive index caused by the carriers generated by the incident x-ray photons. A planar and microetalon approach is illustrated.

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H. Haug & S. Schmitt-Rink, "Basic Mechanisms of the Optical Nonlinearities of Semiconductors Near the Band Edge", (Feb., 1985), J. Optical Society of America B, pp. 1135-1142.
J. L. Jewell, "3-pJ, 82-MHz Optical Logic Gates in a Room-Temperature GaAs-AlGaAs Multiple-Quantum-Well Etalon", (Feb., 1985), Appl. Phys. Lett., 46 (10), pp. 918-920.
N. Peyghambarian & H. M. Gibbs, "Optical Nonlinearity, Bistability, and Signal Processing in Semiconductors", (Apr., 1985), J. Optical Society of America B, pp. 1215-1227.
A. G. Milnes, "Impurity and Defect Levels (Experimental) in Gallium Arsenide", (1983), Advances in Electronics & Electron Physics, vol. 61, pp. 63-160.

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