Writing data to nonvolatile memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185190, C365S185220

Reexamination Certificate

active

06987695

ABSTRACT:
In some embodiments, of the present invention, data are written to a plurality of nonvolatile memory cells (Q0, Q15) as follows. A data writing signal is supplied to one of the memory cells (Q0) but not to both of the memory cells. Then data writing signals are supplied to both of the memory cells simultaneously.

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