Write pre-compensation for nonvolatile memory

Details Write pre-compensation for nonvolatile memory Write pre-compensation for nonvolatile memory

2008-08-22

2011-10-04

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185020, C365S185240, C365S185330, C365S206000, C365S210110

Reexamination Certificate

active

08031526

ABSTRACT:
A memory integrated circuit (IC) includes an input that receives data for programming a target cell to a state. The memory IC further includes a programming module that determines a programming value for programming the target cell to the state based on the state and states of C cells that are adjacent to the target cell. The target cell and the C cells each store K bits per cell, where C and K are integers greater than or equal to 1.

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The International Search Report and the Written Opinion of the International Searching Authority, or the Declaration mailed Mar. 3, 2009 for International Application No. PCT/US2008/074414 filed Aug. 27, 2008; 13 pages.

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