Write operations for phase-change-material memory

Details Write operations for phase-change-material memory Write operations for phase-change-material memory

2005-07-29

2008-12-02

Phan, Trong (Department: 2827)

Static information storage and retrieval

Radiant energy

Amorphous

C365S148000, C365S163000

Reexamination Certificate

active

07460389

ABSTRACT:
Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.

REFERENCES:
patent: 3810128 (1974-05-01), Moser
patent: 3922648 (1975-11-01), Buckley
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6545907 (2003-04-01), Lowrey et al.
patent: 6590807 (2003-07-01), Lowrey
patent: 6731528 (2004-05-01), Hush et al.
patent: 6885602 (2005-04-01), Cho et al.
patent: 7042760 (2006-05-01), Hwang et al.
patent: 7082051 (2006-07-01), Ha et al.
patent: 7085154 (2006-08-01), Cho et al.
patent: 7110286 (2006-09-01), Choi et al.
patent: 7126847 (2006-10-01), Ha et al.
patent: 7130214 (2006-10-01), Lee
patent: 7206216 (2007-04-01), Osada et al.

Affiliated with

Also associated with

Rating

Write operations for phase-change-material memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Write operations for phase-change-material memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Write operations for phase-change-material memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4050362