Write-once read-many memory using EEPROM cells

Details Write-once read-many memory using EEPROM cells Write-once read-many memory using EEPROM cells

1995-01-23

1996-09-03

Nelms, David C.

Static information storage and retrieval

Floating gate

Data security

36518529, 365104, 365201, G11C 1134

Patent

active

055530192

ABSTRACT:
A write-once read-many memory system (10) for electronically securing a select portion of memory from being overwritten or erased. Memory system (10) includes one or more storage cells (25) for providing electronic storage of information. A control cell (13) is used for controlling writing and/or erasing access to the storage cells (25). Control logic (11) is provided to control access to the control cell (13). Control cell (13) and control logic (11) are used as a gate to provide selective access to storage cells (25) through write control line (19) and erase control line (21). Storage cells (25) can only be accessed when the control cell (13) in an appropriate logic state.

REFERENCES:
patent: 4130889 (1978-12-01), Chua
patent: 4152627 (1979-05-01), Priel et al.
patent: 4733386 (1988-03-01), Shimoi
patent: 5175840 (1992-12-01), Sawase et al.
patent: 5226006 (1993-07-01), Wang et al.
patent: 5229972 (1993-07-01), Kondo et al.
patent: 5293610 (1994-03-01), Schwarz
patent: 5381369 (1995-01-01), Kikuchi et al.

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