Write-once nonvolatile phase change memory array

Details Write-once nonvolatile phase change memory array Write-once nonvolatile phase change memory array

2005-01-19

2008-12-16

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S041000, C257S042000

Reexamination Certificate

active

07465951

ABSTRACT:
The invention provides for a write-once nonvolatile memory array, the memory cells comprising a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. The initial, unprogrammed state of each memory cell is a crystalline, low-resistance state, while the programmed state is an amorphous, high-resistance state. Optimizing the circuitry for a write-only memory array, the wordlines or bitlines can be long, with at least 256 cells on a wordline or bitline, and in some embodiments, having thousands of cells on a wordline or bitline. In a preferred embodiment, such an array can be a monolithic three dimensional memory array comprising stacked memory levels.

REFERENCES:
patent: 2006/0013037 (2006-01-01), Li et al.
patent: 2007/0238226 (2007-10-01), Lowrey

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