Write burst stop function in low power DDR sDRAM

Details Write burst stop function in low power DDR sDRAM Write burst stop function in low power DDR sDRAM

2008-07-08

2008-07-08

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Addressing

Sequential

C365S193000, C365S221000, C365S238500, C365S195000

Reexamination Certificate

active

07397727

ABSTRACT:
A write burst stop command function is provided for a semiconductor memory device, and in particular for a memory device having a write latency, such as is common in a low power double data rate (DDR) dynamic random access memory (DRAM) device. In the memory device, when a write stop command is received, pulses that are generated for a column address strobe signal are terminated so that no further data already in the memory device is transferred into a memory array. When the write stop command is received at the beginning of a write operation prior to generation of the pulses in the column address strobe signal, a first-in first-out (FIFO) circuit is reset. The FIFO circuit is used to introduce a predetermined write latency to the write operation. The column address strobe signal is supplied to a column decoder associated with the memory array and to a data path circuit that transfers data to the memory array based on pulses in the column address strobe signal. In one embodiment, the pulses for the column address strobe signal are produced by a latch circuit based on a signal derived from the output of the write latency FIFO circuit and so an input to the latch is disabled in response to the write stop command to stop producing pulses for the column address strobe signal.

REFERENCES:
patent: 5749086 (1998-05-01), Ryan
patent: 6208582 (2001-03-01), Kanda et al.
patent: 6240043 (2001-05-01), Hanson et al.
patent: 6754134 (2004-06-01), Sunaga

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