Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
Reexamination Certificate
active
07977714
ABSTRACT:
A wrapped gate junction field effect transistor (JFET) with at least one semiconductor channel having a first conductivity type doping is provided. Both sidewalls of each of the at least one semiconductor channel laterally abuts a side gate region having a second conductivity type doping, which is the opposite of the first conductivity doping. Further, the at least one semiconductor channel vertically abuts a top gate region and at least one bottom gate region, both having the second conductivity type doping. The gate electrode, which comprises side gate region, the top gate region, and at least one bottom gate regions, wraps around each of the at least one semiconductor channel to provide tight control of the current, i.e., a low off-current, through the at least one semiconductor channel. By employing multiple channels, the JFET may provide a high on-current.
REFERENCES:
patent: 4735914 (1988-04-01), Hendrickson et al.
patent: 4794442 (1988-12-01), Warner, Jr. et al.
patent: 5012305 (1991-04-01), Khadder et al.
patent: 5319227 (1994-06-01), Lapham et al.
patent: 5668397 (1997-09-01), Davis et al.
patent: 6358786 (2002-03-01), Kim
patent: 6486011 (2002-11-01), Yu
patent: 6960517 (2005-11-01), Rios et al.
patent: 6995052 (2006-02-01), Yu et al.
patent: 7049644 (2006-05-01), Fujikawa et al.
patent: 7459366 (2008-12-01), Banerjee et al.
patent: 7615425 (2009-11-01), Trogolo et al.
patent: 7670890 (2010-03-01), El-Kareh et al.
patent: 2003/0205765 (2003-11-01), Masuoka
patent: 2004/0113200 (2004-06-01), Kobayashi et al.
patent: 2007/0284628 (2007-12-01), Kapoor
patent: 2008/0272395 (2008-11-01), Banna
patent: 2008/0272406 (2008-11-01), Banna
patent: WO2006042669 (2006-04-01), None
Ellis-Monaghan John
Phelps Richard A.
Rassel Robert M.
Voldman Steven H.
Zierak Michael J.
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Nguyen Dao H
Nguyen Tram H
Scully , Scott, Murphy & Presser, P.C.
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