Word line voltage generator and flash memory device...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185220

Reexamination Certificate

active

07898869

ABSTRACT:
A word line voltage generator that generates a word line voltage, which is selectively changed depending on a temperature, a flash memory device including the word line voltage generator, and a method of generating the word line voltage. The word line voltage generator includes a read voltage generator and a controller. The read voltage generator generates a read voltage or a verify voltage based on one of reference voltages in response to an enable control signal and supplies the read voltage or the verify voltage to one of a plurality of global word lines in response to a row decoding signal, during a read operation or a read operation for program verification, of the flash memory device. The controller generates one of the reference voltages in response to a read control signal or a verify control signal. When a temperature is varied, the read voltage generator changes the level of the read voltage or the verify voltage in reverse proportion to the temperature.

REFERENCES:
patent: 6473344 (2002-10-01), Kim et al.
patent: 6667904 (2003-12-01), Takeuchi et al.
patent: 6870766 (2005-03-01), Cho et al.
patent: 7269092 (2007-09-01), Miwa
patent: 2007/0263453 (2007-11-01), Tanzawa
patent: 1404611 (2009-03-01), None
Patent Gazette dated Jul. 29, 2009, for Chinese application No. 200610099346.7.

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