Word-line voltage generator

Details Word-line voltage generator Word-line voltage generator

2005-06-14

2005-06-14

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S189090

Reexamination Certificate

active

06906958

ABSTRACT:
A programmable memory circuit includes a memory array having a plurality of floating gate memory cells disposed in a first and second row and at least a first and second column and a reference circuit for providing a word line voltage to the memory array for programming selected memory cells from a selected one of the first and second rows. The word line voltage is dependent at least in part upon a bit line reference voltage and upon a threshold voltage of a reference floating gate cell associated with the selected one of the first and second rows.

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