Word line voltage boost system and method for non-volatile...

Details Word line voltage boost system and method for non-volatile... Word line voltage boost system and method for non-volatile...

2011-04-12

2011-04-12

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180

Reexamination Certificate

active

07924616

ABSTRACT:
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.

REFERENCES:
patent: 6181599 (2001-01-01), Gongwer
patent: 6370062 (2002-04-01), Choi
patent: 6469933 (2002-10-01), Choi et al.
patent: 7023739 (2006-04-01), Chen et al.
patent: 2007/0025152 (2007-02-01), Futatsuyama
patent: 2007/0047326 (2007-03-01), Nguyen et al.
patent: 2009/0016112 (2009-01-01), Lee

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