Word line driving method of semiconductor memory device

Details Word line driving method of semiconductor memory device Word line driving method of semiconductor memory device

2007-06-29

2010-02-16

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S189090, C365S189110, C365S222000, C365S230060

Reexamination Certificate

active

07663931

ABSTRACT:
A semiconductor memory device includes a low voltage supplier for supplying a low voltage lower than a ground voltage; a voltage selector for selecting one of the low voltage and the ground voltage; and a word line driving circuit for driving a word line in response to an output of the voltage selector. The voltage selector operates when a self refresh signal is inputted, and supplies the low voltage as a voltage of logic low level used in the word line driving circuit in a self refresh mode and supplies the ground voltage as a voltage of logic low level used in the word line driving circuit in modes other than the self refresh mode.

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Korean Office Action issued in Korean Patent Application No. KR 10-2006-0134342, dated on Feb. 29, 2008.

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