Word-line discharging circuit in a static-type semiconductor mem

Details Word-line discharging circuit in a static-type semiconductor mem Word-line discharging circuit in a static-type semiconductor mem

1983-02-25

1986-09-09

Moffitt, James W.

Static information storage and retrieval

Addressing

365190, 365179, G11C 1140

Patent

active

046113037

ABSTRACT:
A word-line discharging circuit in a static-type semiconductor memory device, including, for each word line, a first transistor for detecting the potential change of the word line, a time-constant circuit for delaying the output of the first transistor, and a second transistor for conducting a discharging current through the memory cells. The second transistor is switched in response to the output of the time-constant circuit, and includes, for all of the word lines, a common discharging current source. The word-line discharging circuit further includes means respectively provided between the word lines and the common discharging current source for respectively slowing the rate of change in the current flowing through the word lines, whereby double selection of the word lines is prevented.

REFERENCES:
patent: 4156941 (1979-05-01), Homma et al.
patent: 4168490 (1979-09-01), Stinehelfer
patent: 4369502 (1983-01-01), Isogai
patent: 4370736 (1983-01-01), Takahashi
patent: 4393476 (1983-07-01), Ong
patent: 4463448 (1984-07-01), Sugo et al.
patent: 4520462 (1985-05-01), Yamada et al.

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