Word arrangement matrix memory of high bit density having a magn

Details Word arrangement matrix memory of high bit density having a magn Word arrangement matrix memory of high bit density having a magn

1974-09-23

1976-03-30

Urynowicz, Jr., Stanley M.

Communications: electrical

Digital comparator systems

340174PW, 340174VA, 340174M, G11C 11155

Patent

active

039478319

ABSTRACT:
A word arrangement matrix memory of high bit density having a flux keeper is known in which a number of word lines provided on a flux keeper plate are mounted on the surface of a substrate on which a number of digit lines of magnetic strips each comprising a conductive strip coated with at least one ferromagnetic thin film is provided.
In accordance with this invention, the digit lines comprises a plurality of straight sections disposed in parallel at regular spaces, corresponding digit lines of the respective sections being interconnected to one another in series or in parallel. The flux keeper plate has, on the surface facing the said surface of the substrate, a number of parallel column grooves facing the sections of the digit lines and a number of parallel row grooves intersecting at right angles with the column grooves. The word lines comprise a plurality of X lines and a plurality of Y lines, the X lines and the Y lines being arranged so that only a group of memory cells on one of the digit line sections facing a position of the column grooves is selected by current coincidence selection of one of the X lines and one of the Y lines.

REFERENCES:
patent: 3274571 (1966-09-01), Bobeck et al.
patent: 3376561 (1968-04-01), Danylchuk
patent: 3405400 (1968-10-01), Rangachar
patent: 3413617 (1968-11-01), Smith
patent: 3417384 (1968-12-01), Blahut
patent: 3623035 (1971-11-01), Kobayashi et al.
patent: 3665428 (1972-05-01), Olyphant, Jr.

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