Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-08-12
1998-04-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 25, 257 29, H01L 2906, H01L 310328, H01L 310336
Patent
active
057420718
ABSTRACT:
A logical operation circuit in which wiring as generally performed between transistors is made unnecessary to improve reliability, stability and integration degree of a logical circuit using a tunnel phenomenon, for example, a single-electron tunnel phenomenon, or a flight phenomenon of a particle group. Conducting materials are arranged in a two-dimensional plane or three-dimensional space in the logical circuit. When two conducting materials are arranged to be nearest each other, the two conducting materials are connected, for example, by a single-electron tunnel phenomenon. When two conducting materials are arranged to be not nearest, there is no connection between the conducting materials by the tunnel phenomenon. Propagation of electrons is controlled by changing the arrangement. Further, because particles which have entered input regions move toward different flight directions respectively from a branch region on the basis of the property that two particles cannot enter simultaneously within an effective scatter distance by repulsive interaction between particles, flight of particles is controlled so as to enter or not branched particles into an observation region to thereby construct a wiringless logical operation circuit.
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Ihara Sigeo
Kamohara Shiroo
Lee Peter M.
Matsuo Hitoshi
Hitachi , Ltd.
Mintel William
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