Wiring, TFT substrate using the same and LCD

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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Details

C257S059000, C257S751000, C257S753000, C257S762000

Reexamination Certificate

active

06956236

ABSTRACT:
A gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate (31), are disclosed.

REFERENCES:
patent: 5153754 (1992-10-01), Whetten
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5831283 (1998-11-01), Batey et al.
patent: 53-116089 (1978-10-01), None
patent: 3-152807 (1991-06-01), None
patent: 6-97164 (1994-08-01), None
patent: 7-170043 (1995-07-01), None
patent: 8-138461 (1996-05-01), None
patent: 10-153788 (1998-06-01), None
patent: PCT/JP99/06877 (2000-03-01), None

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