Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-10-18
2005-10-18
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S751000, C257S753000, C257S762000
Reexamination Certificate
active
06956236
ABSTRACT:
A gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate (31), are disclosed.
REFERENCES:
patent: 5153754 (1992-10-01), Whetten
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5831283 (1998-11-01), Batey et al.
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patent: 10-153788 (1998-06-01), None
patent: PCT/JP99/06877 (2000-03-01), None
Chae Gee Sung
Sasaki Makoto
Hu Shouxiang
LG. Phillips LCD Co., Ltd.
Morgan & Lewis & Bockius, LLP
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