Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2010-01-13
2011-10-18
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S784000, C257S786000, C257SE23024, C361S760000, C361S792000, C438S617000
Reexamination Certificate
active
08039967
ABSTRACT:
A wiring substrate includes a silicon substrate, a through hole formed to penetrate the silicon substrate in a thickness direction, an insulating layer formed on both surfaces and side surfaces of the silicon substrate and an inner surface of the through hole, a penetration electrode formed in the through hole, a wiring layer formed on at least one surface of the silicon substrate and connected to the penetration electrode, and a metal wire terminal connected to the wiring layer and formed to extend from one surface of the silicon substrate to a side surface thereof. The metal wire terminal on the side surface of the electronic device is connected to the mounting substrate such that a substrate direction of the electronic device in which an electronic component is mounted on the wiring substrate intersects orthogonally with a substrate direction of the mounting substrate.
REFERENCES:
patent: 7307348 (2007-12-01), Wood et al.
patent: 7371676 (2008-05-01), Hembree
patent: 7579267 (2009-08-01), Wood et al.
patent: 7919846 (2011-04-01), Hembree
patent: 2006/0228825 (2006-10-01), Hembree
patent: 2007/0167000 (2007-07-01), Wood et al.
patent: 2008/0157361 (2008-07-01), Wood et al.
patent: 2007-132687 (2007-05-01), None
Higashi Mitsutoshi
Shiraishi Akinori
Taguchi Yuichi
Chambliss Alonzo
Kratz Quintos & Hanson, LLP
Shinko Electric Industries Co. Ltd.
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