Wiring substrate with a wire terminal

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S784000, C257S786000, C257SE23024, C361S760000, C361S792000, C438S617000

Reexamination Certificate

active

08039967

ABSTRACT:
A wiring substrate includes a silicon substrate, a through hole formed to penetrate the silicon substrate in a thickness direction, an insulating layer formed on both surfaces and side surfaces of the silicon substrate and an inner surface of the through hole, a penetration electrode formed in the through hole, a wiring layer formed on at least one surface of the silicon substrate and connected to the penetration electrode, and a metal wire terminal connected to the wiring layer and formed to extend from one surface of the silicon substrate to a side surface thereof. The metal wire terminal on the side surface of the electronic device is connected to the mounting substrate such that a substrate direction of the electronic device in which an electronic component is mounted on the wiring substrate intersects orthogonally with a substrate direction of the mounting substrate.

REFERENCES:
patent: 7307348 (2007-12-01), Wood et al.
patent: 7371676 (2008-05-01), Hembree
patent: 7579267 (2009-08-01), Wood et al.
patent: 7919846 (2011-04-01), Hembree
patent: 2006/0228825 (2006-10-01), Hembree
patent: 2007/0167000 (2007-07-01), Wood et al.
patent: 2008/0157361 (2008-07-01), Wood et al.
patent: 2007-132687 (2007-05-01), None

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