Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-03-22
2011-03-22
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S621000, C257S673000, C257S676000, C257S758000, C257S781000, C257SE23061
Reexamination Certificate
active
07911048
ABSTRACT:
There is provided a wiring substrate. The wiring substrate includes: a semiconductor substrate having a through hole; an insulating film provided to cover an upper surface, a lower surface and a first surface of the semiconductor substrate, the first surface corresponding to a side surface of the through hole; a through electrode provided in the through hole; a first wiring pattern disposed on an upper surface side of the semiconductor substrate and coupled to the through electrode; and a second wiring pattern disposed on a lower surface side of the semiconductor substrate and coupled to the through electrode. A first air gap is provided between the first wiring pattern and the insulating film formed on the upper surface, and a second air gap is provided between the second wiring pattern and the insulating film formed on the lower surface.
REFERENCES:
patent: 6521970 (2003-02-01), Takiar et al.
patent: 2005/0020052 (2005-01-01), Lee et al.
patent: 2007/0029654 (2007-02-01), Sunohara et al.
patent: 2007-042741 (2007-02-01), None
Bryant Kiesha R
Drinker Biddle & Reath LLP
Shinko Electric Industries Co. Ltd.
Yang Minchul
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